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| APTM100U13S Single switch Series & parallel diodes MOSFET Power Module SK CR1 D VDSS = 1000V RDSon = 130m typ @ Tj = 25C ID = 65A @ Tc = 25C Application * * * Motor control Switched Mode Power Supplies Uninterruptible Power Supplies S Q1 G Features * Power MOS V(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance * * Benefits * * * Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C Tc = 25C mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website - http://www.advancedpower.com 1-5 APTM100U13S - Rev 2 July, 2005 Max ratings 1000 65 48 260 30 145 1250 17 50 2500 Unit V A V m W A APTM100U13S All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Test Conditions Min Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current VGS = 0V,VDS= 1000V VGS = 0V,VDS= 800V Tj = 25C Tj = 125C Typ VGS = 10V, ID = 32.5A VGS = VDS, ID = 10mA VGS = 30 V, VDS = 0V 130 2 Max 100 400 145 4 200 Unit A m V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff RthJC Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Junction to Case Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 500V ID = 65A Inductive Switching @ 25C VGS = 15V VBus = 667V ID = 65A R G = 1.5 Inductive switching @ 25C VGS = 15V, VBus = 667V ID = 65A, R G = 1.5 Inductive switching @ 125C Min Typ 26.4 2.38 1.16 1340 116 660 20 20 125 40 2.6 1.6 4.2 1.82 Max 31.6 3.32 1.72 2000 180 1000 Unit nF nC ns J J 0.1 C/W VGS = 15V, VBus = 667V ID = 65A, R G = 1.5 Series diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF(A V) VF Maximum Reverse Leakage Current Maximum Average Forward Current Diode Forward Voltage Test Conditions VR=200V 50% duty cycle Min 200 Tj = 25C Tj = 125C Tc = 80C Typ Max 350 600 Unit V A A IF = 120A IF = 240A IF = 120A IF = 120A VR = 133V di/dt = 400A/s Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C 120 1.1 1.4 0.9 31 60 120 500 1.15 V Qrr RthJC Reverse Recovery Charge Junction to Case nC 0.46 C/W APT website - http://www.advancedpower.com 2-5 APTM100U13S - Rev 2 July, 2005 trr Reverse Recovery Time ns APTM100U13S Parallel diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF(A V) VF trr Qrr RthJC Symbol VISOL TJ TSTG TC Torque Wt Maximum Reverse Leakage Current Maximum Average Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Junction to Case Characteristic Min 2500 -40 -40 -40 3 Typ Test Conditions VR=1000V 50% duty cycle Min 1000 Tj = 25C Tj = 125C Tc = 40C Typ Max 250 500 Unit V A A IF = 100A IF = 200A IF = 100A IF = 100A VR = 667V di/dt = 200A/s Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C 100 1.9 2.2 1.7 300 360 800 4050 2.5 V ns nC 0.6 Max 150 125 100 1.2 5 400 C/W Unit V C N.m g Thermal and package characteristics RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight M4 M6 J3 Package outline (dimensions in mm) APT website - http://www.advancedpower.com 3-5 APTM100U13S - Rev 2 July, 2005 APTM100U13S Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.12 Thermal Impedance (C/W) 0.1 0.08 0.06 0.04 0.02 0.9 0.7 0.5 0.3 0.1 0.05 0 0.00001 0.0001 Single Pulse 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) 1 10 Low Voltage Output Characteristics 200 ID, Drain Current (A) ID, Drain Current (A) V GS =15V 5V Transfert Characteristics 200 VDS > I D(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle 150 100 150 100 50 0 4.5V 50 4V T J=125C TJ =25C TJ =-55C 0 0 5 10 15 VDS , Drain to Source Voltage (V) RDS(on) vs Drain Current V GS =10V 20 0 1 2 3 4 5 6 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 70 ID, DC Drain Current (A) 200 60 50 40 30 20 10 0 25 50 75 100 125 TC, Case Temperature (C) 150 RDS(on) Drain to Source ON Resistance 1.30 Normalized to VGS =10V @ 32.5A 1.20 1.10 VGS =20V 1.00 0.90 0 50 100 150 ID, Drain Current (A) APT website - http://www.advancedpower.com 4-5 APTM100U13S - Rev 2 July, 2005 APTM100U13S RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS (TH), Threshold Voltage (Normalized) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Gate Charge vs Gate to Source Voltage 18 VGS, Gate to Source Voltage (V) 16 14 12 10 8 6 4 2 0 0 500 1000 1500 Gate Charge (nC) 2000 VDS=200V VDS=800V 2.5 2.0 1.5 1.0 0.5 0.0 ON resistance vs Temperature VGS=10V ID=32.5A -50 -25 0 25 50 75 100 125 150 T J, Junction Temperature (C) Capacitance vs Drain to Source Voltage Ciss 100000 C, Capacitance (pF) 10000 Coss 1000 Crss 100 0.01 0.1 1 10 100 VDS, Drain to Source Voltage (V) Source to Drain Diode Forward Voltage VDS=500V IDR , Reverse Drain Current (A) ID=65A T J=25C 1000 100 TJ=150C 10 TJ=25C 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VS D, Source to Drain Voltage (V) Operating Frequency vs Drain Current 250 200 Frequency (kHz) 150 100 50 0 10 20 30 40 50 ID, Drain Current (A) 60 V DS=667V D=50% R G=1. 5 T J=125C T C=75C ZVS ZCS APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website - http://www.advancedpower.com 5-5 APTM100U13S - Rev 2 July, 2005 Hard switching |
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